Specifications:

• Type Designator: IRFZ44
  
• Type of Transistor: MOSFET
  
• Type of Control Channel: N -Channel
  
• Maximum Power Dissipation (Pd): 125 W
  
• Maximum Drain-Source Voltage |Vds|: 450 V
  
• Maximum Gate-Source Voltage |Vgs|: 10 V
  
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  
• Maximum Drain Current |Id|: 8.8 A
  
• Maximum Junction Temperature (Tj): 150 °C
  
• Total Gate Charge (Qg): 80 nC
  
• Maximum Drain-Source On-State Resistance (Rds): 0.63 Ohm