Features:
- Fast Read Access Time ��� 150 ns
- Fast Byte Write ��� 200 ms or 1 ms
- Self-Timed Byte Write Cycle
- Internal Address and Data Latches
- Internal Control Timer
- Automatic Clear Before Write
- Direct Microprocessor Control
- Low Power
- 30mA Active Current
- 100mA CMOS Standby Current
- High Reliability
- Endurance: 104��or 105��Cycles
- Data Retention: 10 Years
- 5V �� 10% Supply
- CMOS & TTL Compatible Inputs and Outputs
- JEDEC Approved Byte Wide Pinout
- Commercial and Industrial Temperature Ranges
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| Physical |
|
| Case/Package |
DIP |
| Mount |
Through Hole |
| Number of Pins |
24 |
| Technical |
|
| Access Time |
150 ns |
| Density |
16 kb |
| Frequency |
150 GHz |
| Interface |
Parallel |
| Max Operating Temperature |
70 ��C |
| Max Supply Voltage |
5.5 V |
| Memory Size |
2 kB |
| Memory Type |
EEPROM |
| Min Operating Temperature |
0 ��C |
| Min Supply Voltage |
4.5 V |
| Nominal Supply Current |
30 mA |
| Operating Supply Voltage |
5 V |
